BLF6G20-230PRN Datasheet, PDF (1/7 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G20-230PRN
Power LDMOS transistor
Rev. 01 — 2 December 2008
Objective data sheet
1. Product profile
1.1 General description
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
V_DS P_L(AV) G_p
η_D
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
28 50 16.5 29.5
ACPR
(dBc)
−35^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an I_Dq of 2000 mA:
N Average output power = 50 W
N Power gain = 16.5 dB (typ)
N Efficiency = 29.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)