BLF6G20-180RN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G20-180RN;
BLF6G20LS-180RN
Power LDMOS transistor
Rev. 01 — 17 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS P_L(AV) G_p
η_D
IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier WCDMA
1930 to 1990 30 40
17.2 27
−38^[1]
ACPR
(dBc)
−41^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 30 V and an I_Dq of 1400 mA:
N Average output power = 40 W
N Power gain = 17.2 dB
N Efficiency = 27 %
N IMD3 = −41 dBc
N ACPR = −38 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use