BLF6G20-110 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Rev. 01 — 28 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
V_DS P_L(AV) G_p
η_D IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1930 to 1990
28 25
19
31 −37^[1]
ACPR
(dBc)
−40^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I_Dq of 900 mA:
N Average output power = 25 W
N Power gain = 19 dB
N Efficiency = 31 %
N IMD3 = −37 dBc
N ACPR = −40 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)