BLF6G10LS-200R Datasheet, PDF (1/10 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10LS-200R
Power LDMOS transistor
Rev. 01 — 21 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
η_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28
40
20
27.5
ACPR
(dBc)
−40^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I_Dq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27.5 %
N ACPR = −40 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)