BLF6G10-45 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10-45
Power LDMOS transistor
Rev. 02 — 20 January 2010
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 700 MHz
to 1000 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV) G_p
η_D
(MHz)
(V)
(W) (dB) (%)
2-carrier W-CDMA
920 to 960
28
1.0
22.5 7.8
ACPR
(dBc)
−48.5^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an I_Dq of 350 mA:
‹ Average output power = 1.0 W
‹ Gain = 22.5 dB
‹ Efficiency = 7.8 %
‹ ACPR = −48.5 dBc
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (700 MHz to 1000 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)