BLF6G10-160RN Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G10-160RN;
BLF6G10LS-160RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
η_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
920 to 960
32
32
22.5 27
ACPR
(dBc)
−41^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 32 V and an I_Dq of 1200 mA:
‹ Average output power = 32 W
‹ Power gain = 22.5 dB
‹ Efficiency = 27 %
‹ ACPR = −41 dBc
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (700 MHz to 1000 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)