BLF645 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Broadband power LDMOS transistor

BLF645
Broadband power LDMOS transistor
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at T_h = 25 °C in a common source test circuit.
Mode of operation f
V_DS P_L
P_L(PEP)
(MHz)
(V) (W) (W)
CW, class-AB
1300
32 100 -
2-tone, class-AB
1300
32 -
100
G_p
(dB)
18
18
η_D
IMD
(%) (dBc)
56
-
45
−32
1.2 Features
„ CW performance at 1300 MHz, a drain-source voltage V_DS of 32 V and a quiescent
drain current I_Dq = 0.9 A for total device:
‹ Average output power = 100 W
‹ Power gain = 18 dB
‹ Drain efficiency = 56 %
„ 2-tone performance at 1300 MHz, a drain-source voltage V_DS of 32 V and a quiescent
drain current I_Dq = 0.9 A for total device:
‹ Peak envelope load power = 100 W
‹ Power gain = 18 dB
‹ Drain efficiency = 45 %
‹ Intermodulation distortion = −32 dBc
„ Integrated ESD protection
„ Excellent ruggedness
„ High power gain
„ High efficiency
„ Excellent reliability
„ Easy power control
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)