BLF578 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor

BLF578
Power LDMOS transistor
Rev. 01 — 11 December 2008
Objective data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation
f
(MHz)
pulsed RF
225
V_DS
P_L
(V)
(W)
G_p
η_D
(dB)
(%)
50
1200
24
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I_Dq of 40 mA, a t_p of 100 µs with δ of 20 %:
N Output power = 1200 W
N Power gain = 24 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (10 MHz to 500 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications