BLF574 Datasheet, PDF(1/18 Page) NXP Semiconductors – HF / VHF power LDMOS transistor

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BLF574 Datasheet, PDF (1/18 Pages) NXP Semiconductors – HF / VHF power LDMOS transistor

BLF574

HF / VHF power LDMOS transistor

Rev. 01 â 8 December 2008

Preliminary data sheet

1. Product proï¬le

1.1 General description

A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial

applications in the HF to 500 MHz band.

Table 1. Application information

Mode of operation

(MHz)

225

108

VDS

Î·D

(V)

(W)

(dB)

(%)

500

26.5

600

27.5

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq

of 1000 mA:

N Average output power = 500 W

N Power gain = 26.5 dB

N Efï¬ciency = 70 %

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efï¬ciency

I Excellent thermal stability

I Designed for broadband operation (10 MHz to 500 MHz)

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

I Industrial, scientiï¬c and medical applications

I Broadcast transmitter applications

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