BLF573S Datasheet, PDF(1/14 Page) NXP Semiconductors

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BLF573S Datasheet, PDF (1/14 Pages) NXP Semiconductors – HF / VHF power LDMOS transistor

BLF573S

HF / VHF power LDMOS transistor

Rev. 01 â 8 December 2008

Preliminary data sheet

1. Product proï¬le

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientiï¬c

and medical applications in the HF to 500 MHz band.

Table 1. Production test information

Mode of operation f

VDS

Î·D

(MHz)

(V)

(W)

(dB)

(%)

225

300

26.5

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an

IDq of 900 mA:

N Average output power = 300 W

N Power gain = 26.5 dB

N Efï¬ciency = 70 %

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efï¬ciency

I Excellent thermal stability

I Designed for broadband operation (HF and VHF band)

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

I Industrial, scientiï¬c and medical applications

I Broadcast transmitter applications

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