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BLF571 Datasheet, PDF (1/13 Pages) NXP Semiconductors – HF / VHF power LDMOS transistor
BLF571
HF / VHF power LDMOS transistor
Rev. 01 — 11 December 2008
Preliminary data sheet
1. Product profile
1.1 General description
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.
Table 1. Production test performance
Mode of operation
f
(MHz)
CW
225
VDS
PL
(V)
(W)
50
20
Gp
ηD
(dB)
(%)
27.5
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 50 mA:
N Average output power = 20 W
N Power gain = 27.5 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (10 MHz to 500 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications