BLF4G22-130 Datasheet, PDF (1/13 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Rev. 01 — 3 July 2007
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
T_case = 25 °C in a common source class-AB test circuit.
Mode of operation
f
V_DS P_L(AV) G_p η_D IMD3 ACPR
(MHz)
(V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA^[1]
f₁ = 2135;
f₂ = 2145
28
33
13.5 26 −37 −41
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an I_Dq of
1150 mA:
N Average output power = 33 W
N Power gain = 13.8 dB
N Efficiency = 26 %
N ACPR = −41 dBc
N IMD3 = −37 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW))
I High efficiency
I High peak power capability (> 190 W)
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use