BLF4G20LS-130 Datasheet, PDF (1/11 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF4G20LS-130
UHF power LDMOS transistor
Rev. 01 — 1 June 2007
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
T_case = 25 °C; I_Dq = 900 mA; unless otherwise specified; in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L P_L(AV) G_p
η_D ACPR₄₀₀
(MHz)
(V) (W) (W) (dB) (%) (dBc)
CW
1930 to 1990
28
130 -
14.5 50 -
GSM EDGE
1930 to 1990
28
-
60
14.8 36 −62^[1]
2-tone
1930 to 1990 28
-
65
14.6 38.5 -
ACPR₆₀₀ EVM_rms IMD3
(dBc) (%)
(dBc)
-
-
-
−73^[1]
2.1
-
-
-
−30
[1] ACPR₄₀₀ and ACPR₆₀₀ at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical GSM EDGE performance at frequencies of 1990 MHz, a supply voltage of 28 V
and an I_Dq of 900 mA:
N Average output power = 60 W
N Power gain = 14.8 dB
N Efficiency = 36 %
N ACPR₄₀₀ = −62 dBc
N ACPR₆₀₀ = −73 dBc
N EVM_rms = 2.1 %
I Easy power control
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use