BLF4G20-110B Datasheet, PDF (1/14 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF4G20-110B;
BLF4G20S-110B
UHF power LDMOS transistor
Rev. 01 — 23 January 2006
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
f = 1930 MHz to 1990 MHz; T_case = 25 °C; in a class-AB production test circuit.
Mode of operation
V_DS P_L
(V) (W)
G_p η_D
(dB) (%)
ACPR₄₀₀ ACPR₆₀₀
(dBc)
(dBc)
(typ) (typ) (typ)
(typ)
CW
28 100
13.4 49 -
-
GSM EDGE
28 48 (AV)
13.8 38.5 −61 ^[1]
−74 ^[2]
EVM_rms
(%)
(typ)
-
2.1
[1] ACPR₄₀₀ at 30 kHz resolution bandwidth.
[2] ACPR₆₀₀ at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I_Dq of 650 mA:
x Load power = 48 W (AV)
x Gain = 13.8 dB (typ)
x Efficiency = 38.5 % (typ)
x ACPR₄₀₀ = −61 dBc (typ)
x ACPR₆₀₀ = −74 dBc (typ)
x EVM_rms = 2.1 % (typ)
s Easy power control
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)