BLF4G10LS-160 Datasheet, PDF (1/15 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF4G10LS-160
UHF power LDMOS transistor
Rev. 01 — 19 June 2007
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB test circuit.
Mode of operation f
V_DS P_L P_L(AV) G_p η_D ACPR₄₀₀ ACPR₆₀₀ EVM_rms IMD3
(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) (%)
(dBc)
CW
894 28 200 -
19.0 59 -
-
-
-
2-tone
894 28 - 80 19.7 42.5 -
-
-
−30
GSM EDGE
894 28 - 80
19.7 41.5 −61^[1]
−72^[1]
2.6
-
[1] ACPR₄₀₀ and ACPR₆₀₀ at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical GSM EDGE performance at f = 894 MHz, V_DS = 28 V and I_Dq = 900 mA:
N Average output power = 80 W
N Gain = 19.7 dB
N Efficiency = 41.5 %
N ACPR₄₀₀ = −61 dBc
N ACPR₆₀₀ = −72 dBc
N EVM_rms = 2.6 %
I Easy power control
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use