BLF3G22-30 Datasheet, PDF(1/13 Page) NXP Semiconductors

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BLF3G22-30 Datasheet, PDF (1/13 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF3G22-30

UHF power LDMOS transistor

Rev. 01 â 21 June 2007

Product data sheet

1. Product proï¬le

1.1 General description

30 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz

Table 1. Typical class-AB RF performance

IDq = 450 mA; Th = 25 Â°C in a common source test circuit.

Mode of operation

VDS IDq

PL(PEP) PL(AV) Gp Î·D IMD ACPR IMD3

(MHz) (MHz) (V) (mA) (W)

(W) (dB) (%) (dBc) (dBc) (dBc)

2-tone

2170 2170.1 28 450 36

14 34 â24 -

2-carrier W-CDMA[1]

2115 2165 28 450 -

15 21 -

â42[2] â38

[1] 3GPP test model 1; 64 channels with 66 % clippings

[2] Measured within 10 kHz bandwidth

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Excellent back off linearity

I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and IDq of 450 mA:

N Average output power = 6 W

N Gain = 15 dB

N Efï¬ciency = 21 %

N ACPR = â42 dBc (at 3.84 MHz)

N IMD3 = â38 dBc

I Easy power control

I Excellent ruggedness

I High power gain

I Excellent thermal stability

I Designed for broadband operation (2000 MHz to 2200 MHz)

I Internally matched for ease of use

I ESD protection

▷