BLF3G21-6 Datasheet, PDF (1/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF3G21-6
UHF power LDMOS transistor
Rev. 01 — 25 June 2008
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1. Typical class-AB RF performance
I_Dq = 90 mA; T_h = 25 °C in a common source test circuit.
Mode of operation
f
P_L
G_p
(MHz)
(W) (dB)
CW
2000
7
12.5
Two-tone
2000
6
15.5
< 2 15.8
η_D
IMD3
(%) (dB)
43 -
39 −32
-
< −50
P_L(1dB)
(W)
7
-
-
Table 2. Typical class-A RF performance
I_Dq = 200 mA; T_h = 25 °C in a modified PHS test fixture.
Mode of operation
f
P_L(AV)
(MHz)
(W)
PHS
1880 to 1920
2
G_p
(dB)
16
η_D
ACPR_600k
(%) (dBc)
20 −75
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Excellent back-off linearity
I Typical PHS performance at a supply voltage of 26 V and I_Dq of 200 mA:
N Average output power = 2 W
N Power gain = 16 dB
N Efficiency = 20 %
N ACPR_600k = −75 dBc
I Easy power control
I Excellent ruggedness
I High power gain
I Excellent thermal stability
I Designed for broadband operation (HF to 2200 MHz)