BLF369 Datasheet, PDF (1/17 Pages) NXP Semiconductors – VHF power LDMOS transistor

BLF369
Multi-use VHF power LDMOS transistor
Rev. 03 — 29 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave
applications in the HF/VHF band up to 500 MHz.
Table 1. Typical performance
Typical RF performance at V_DS = 32 V and T_h = 25 °C in a common-source 225 MHz test circuit.^[1]
Mode of operation f
P_L
P_L(PEP)
G_p
η_D
IMD3
(MHz)
(W)
(W)
(dB) (%)
(dBc)
CW, class AB
225
500
-
18
60
-
2-tone, class AB
f₁ = 225; f₂ = 225.1 -
500
pulsed, class AB ^[2] 225
500
-
19
47
−28
19
55
-
[1] T_h is the heatsink temperature.
[2] t_p = 2 ms; δ = 10 %.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed performance at 225 MHz, a drain-source voltage V_DS of 32 V and a
quiescent drain current I_Dq = 2 × 1.0 A:
N Load power P_L = 500 W
N Power gain G_p = 19 dB
N Drain efficiency η_D = 55 %
I Advanced flange material for optimum thermal behavior and reliability
I Excellent ruggedness
I High power gain
I Designed for broadband operation (HF/VHF band)
I Source on underside eliminates DC isolators, reducing common-mode inductance
I Easy power control
I Integrated ESD protection
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS), using exemption No. 7 of the annex