BLF184XR Datasheet, PDF (1/10 Pages) NXP Semiconductors – Power LDMOS transistor

BLF184XR; BLF184XRS
Power LDMOS transistor
Rev. 1 — 6 May 2013
Objective data sheet
1. Product profile
1.1 General description
A 650 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
V_DS
P_L
(V)
(W)
50
650
G_p
_D
(dB)
(%)
23.5
72
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 600 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications