BLA6H0912-500 Datasheet, PDF (1/14 Pages) NXP Semiconductors – LDMOS avionics radar power transistor

BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 03 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Test information
Typical RF performance at T_case = 25 °C; t_p = 128 μs; δ = 10 %; I_Dq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(MHz)
V_DS P_L
G_p
η_D t_r
t_f
(V) (W) (dB) (%) (ns) (ns)
pulsed RF
960 to 1200
50 450 17
50 20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an I_Dq of 100 mA, a t_p of 128 μs with δ of 10 %:
‹ Output power = 450 W
‹ Power gain = 17 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (960 MHz to 1215 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)