BLA6G1011-200R Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLA6G1011-200R
Power LDMOS transistor
Rev. 02 — 1 March 2010
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1. Test information
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS P_L
G_p
η_D t_r
t_f
(MHz)
(V) (W) (dB) (%) (ns) (ns)
pulsed class-AB
1030 to 1090
28 200 20
65 10
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical pulsed RF performance at frequencies of 1030 MHz and 1090 MHz, a supply
voltage of 28 V and an I_Dq of 100 mA:
‹ Output power = 200 W
‹ Power gain = 20 dB
‹ Efficiency = 65 %
„ Easy power control
„ Integrated ESD protection
„ Enhanced ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1030 MHz to 1090 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
„ Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.