BLA1011-300 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Avionics LDMOS transistors

BLA1011-300
Avionics LDMOS transistors
Rev. 02 — 5 February 2008
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from
1030 MHz to 1090 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit; t_p = 50 µs;
δ = 2 %.
Mode of operation
f
(MHz)
I_Dq
V_DS
P_L
(mA) (V)
(W)
G_p
η_D
(dB) (%)
Pulsed class-AB
1030 to 1090
150 32
300
16.5
57
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply
voltage of 32 V, an I_Dq of 150 mA, a t_p of 50 µs and a δ of 2 %:
N Output power = 300 W
N Power gain = 16.5 dB (typ)
N Efficiency = 57 % (typ)
I Easy power control
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for operation in 1030 MHz to 1090 MHz band
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency
band