BLA1011-200R Datasheet, PDF (1/13 Pages) NXP Semiconductors – Avionics LDMOS transistors

BLA1011-200R; BLA1011S-200R
Avionics LDMOS transistors
Rev. 01 — 23 February 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1. Typical performance
RF performance at T_h = 25 °C in a common source class-AB test circuit; I_Dq = 150 mA;
typical values.
Mode of operation
Conditions
V_DS P_L
G_p
η_D
t_r
t_f
(V) (W) (dB) (%) (ns) (ns)
Pulsed class-AB:
t_p = 50 μs; δ = 2 %
36 200 15 50 35 6
1030 MHz to 1090 MHz _{tp = 128 μs; δ = 2 %}
36
250 14
50
35
6
t_p = 340 μs; δ = 1 % 36 250 14 50 35 6
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz,
a supply voltage of 36 V and an I_Dq of 150 mA:
‹ Load power ≥ 200 W
‹ Gain ≥ 13 dB
‹ Efficiency ≥ 45 %
‹ Rise time ≤ 50 ns
‹ Fall time ≤ 50 ns
„ High power gain
„ Easy power control
„ Excellent ruggedness
„ Source on mounting flange eliminates DC isolators, reducing common mode
inductance
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)