BLA0912-250R Datasheet, PDF (1/13 Pages) NXP Semiconductors – Avionics LDMOS power transistor

BLA0912-250R
Avionics LDMOS power transistor
Rev. 01 — 3 March 2010
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
Table 1. Test information
Typical RF performance measured in common source class-AB test circuit at P_L = 250 W and 960 MHz to 1215 MHz
frequency band. T_h = 25 °C; Z_th(j-h) = 0.15 K/W; unless otherwise specified.
Mode of operation f
t_p
δ V_DS P_L G_p ΔG_p η_D P_droop(pulse) t_r
t_f
Z_th(j-h) ϕ_ins(rel)
(MHz)
(μs) % (V) (W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W) (deg)
all modes
960 to 1215 100 10 36 250 13.5 0.8 50 0.1
25 6 0.18 ±5
TCAS
1030 to 1090 32 0.1 36 250 14.0 0.8 50 0
25 6 0.07 ±5
Mode-S
1030 to 1090 128 2 36 250 13.5 0.8 50 0.1
25 6 0.15 ±5
1030 to 1090 340 1 36 250 13.5 0.8 50 0.2
25 6 0.20 ±5
JTIDS
960 to 1215 3300 22 36 200 13.0 1.2 45 0.2
25 6 0.45 ±5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ High power gain
„ Easy power control
„ Excellent ruggedness
„ Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
„ Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.