BGY67A112 Datasheet, PDF (1/8 Pages) NXP Semiconductors – 200 MHz, 24 dB gain reverse amplifier

BGY67A
200 MHz, 24 dB gain reverse amplifier
Rev. 5 — 19 September 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage
supply of 24 V (DC).
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Excellent linearity
 Extremely low noise
 Silicon nitride passivation
 Rugged construction
 TiPtAu metallized crystals ensure optimal reliability
1.3 Applications
 Reverse amplifier in two-way CATV systems in the 5 MHz to 200 MHz frequency
range
1.4 Quick reference data
Table 1.
Symbol
G_p
I_tot
Quick reference data
Parameter
Conditions
power gain
f = 10 MHz
total current consumption (DC)
Min Typ
23.5 -
[1] _-
215
Max Unit
24.5 dB
230 mA
[1] The module normally operates at V_B = 24 V, but is able to withstand supply transients up to 30 V.