BGU8052 Datasheet, PDF (1/16 Pages) NXP Semiconductors – ESD protection on all terminals

BGU8052
Low noise high linearity amplifier
Rev. 4 — 20 January 2017
Product data sheet
1. General description
The BGU8052 is, also known as the BGTS1001M, a low noise high linearity amplifier for
wireless infrastructure applications, equipped with fast shutdown to support TDD systems.
The LNA has a high input and output return loss and is designed to operate between
1.5 GHz and 2.5 GHz. It is housed in a 2 mm  2 mm  0.75 mm 8-terminal plastic thin
small outline package. The LNA is ESD protected on all terminals.
2. Features and benefits
 Low noise performance: NF = 0.50 dB
 High linearity performance: IP3_O = 36 dBm
 High input return loss > 15 dB
 High output return loss > 20 dB
 Unconditionally stable up to 20 GHz
 Programmable bias current (via resistor)
 Small 8-terminal leadless package 2 mm  2 mm  0.75 mm
 ESD protection on all terminals
 Moisture sensitivity level 1
 Fast shut down to support TDD systems
 3 V to 5 V single supply
3. Applications
 Wireless infrastructure
 Low noise and high linearity applications
 LTE, W-CDMA, CDMA, GSM
 General-purpose wireless applications
 TDD or FDD systems
 Suitable for small cells