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BGD712C_10 Datasheet, PDF (1/8 Pages) NXP Semiconductors – 750 MHz, 18.5 dB gain power doubler amplifier | |||
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BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
Rev. 3 â 29 September 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Excellent linearity
 Extremely low noise
 Excellent return loss properties
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability
1.3 Applications
 CATV systems operating in the 40 MHz to 750 MHz frequency range.
1.4 Quick reference data
Table 1.
Symbol
Gp
Quick reference data
Parameter
power gain
Itot
total current
Conditions
f = 45 MHz
f = 750 MHz
VB = 24 V
Min Typ
18.2 -
19 -
[1] 380 -
Max Unit
18.8 dB
20 dB
410 mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
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