BFU760F Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU760F
NPN wideband silicon germanium RF transistor
Rev. 1 — 29 April 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
„ Low noise high linearity RF transistor
„ High maximum output third-order intercept point 32 dBm at 1.8 GHz
„ 110 GHz f_T silicon germanium technology
1.3 Applications
„ Ka band oscillators DRO’s
„ High linearity applications
„ Medium output power applications
„ Wi-Fi / WLAN / WiMAX
„ GPS
„ ZigBee
„ SDARS first stage LNA
„ LTE, cellular, UMTS