BF1210 Datasheet, PDF (1/21 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET

BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment