BF1107 Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel single gate MOS-FETs

BF1107
N-channel single gate MOSFET
Rev. 04 — 9 January 2007
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Currentless RF switch
1.3 Applications
I Various RF switching applications such as:
N Passive loop through for VCR tuner
N Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
L_ins(on)
ISL_off
R_DSon
V_GS(p)
Quick reference data
Parameter
Conditions
on-state insertion loss V_SG = V_DG = 0 V;
f = 50 MHz to 860 MHz
off-state isolation
R_S = R_L = 50 Ω
R_S = R_L = 75 Ω
V_SG = V_DG = 5 V;
f = 50 MHz to 860 MHz
drain-source on-state
resistance
R_S = R_L = 50 Ω
R_S = R_L = 75 Ω
V_GS = 0 V; I_D = 1 mA
gate-source pinch-off V_DS = 1 V; I_D = 20 µA
voltage
Min Typ Max Unit
-
-
2.5 dB
-
-
3.5 dB
30 -
-
dB
30 -
-
dB
-
12 20 Ω
-
−3 −4.5 V