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BC847DS Datasheet, PDF (1/12 Pages) NXP Semiconductors – 45 V, 100 mA NPN/NPN general-purpose transistor
BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
VCEO
IC
hFE
collector-emitter voltage open base
collector current
DC current gain
VCE = 5 V; IC = 2 mA
Min Typ Max Unit
-
-
45
V
-
-
100 mA
200 300 450