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BC846BPN Datasheet, PDF (1/15 Pages) NXP Semiconductors – 65 V, 100 mA NPN/PNP general-purpose transistor
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
Rev. 01 — 17 July 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1. Product overview
Type number Package
NXP
BC846BPN
SOT363
JEITA
SC-88
NPN/NPN
complement
BC846BS
PNP/PNP
complement
BC856BS
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC
collector current
TR1 (NPN)
open base
-
-
65
V
-
-
100 mA
hFE
DC current gain
TR2 (PNP)
VCE = 5 V; IC = 2 mA
200 300 450
hFE
DC current gain
VCE = −5 V;
IC = −2 mA
200 290 450