BC637 Datasheet, PDF(1/15 Page) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS)

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BC637 Datasheet, PDF (1/15 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS)

BC637; BCP55; BCX55

60 V, 1 A NPN medium power transistors

Rev. 07 â 25 June 2007

Product data sheet

1. Product proï¬le

1.1 General description

NPN medium power transistor series.

Table 1. Product overview

Type number[1]

Package

NXP

BC637[2]

SOT54

BCP55

SOT223

BCX55

SOT89

JEITA

SC-43A

SC-73

SC-62

JEDEC

TO-92

TO-243

[1] Valid for all available selection groups.

[2] Also available in SOT54A and SOT54 variant packages (see Section 2).

PNP complement

BC638

BCP52

BCX52

1.2 Features

I High current

I Two current gain selections

I High power dissipation capability

1.3 Applications

I Linear voltage regulators

I Low-side switches

I MOSFET drivers

I Ampliï¬ers

1.4 Quick reference data

Table 2.

Symbol

VCEO

ICM

hFE

Quick reference data

Parameter

Conditions

collector-emitter voltage open base

collector current

peak collector current

DC current gain

hFE selection -10

hFE selection -16

single pulse; tp â¤ 1 ms

VCE = 2 V; IC = 150 mA

Min Typ Max Unit

60 V

1.5 A

63 -

250

63 -

160

100 -

250

▷