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BC56PA Datasheet, PDF (1/22 Pages) NXP Semiconductors – 80 V, 1 A NPN medium power transistors | |||
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BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
Rev. 9 â 25 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
BCP56
SOT223
BCX56
SOT89
BC56PA
SOT1061
JEITA
SC-73
SC-62
-
[1] Valid for all available selection groups.
JEDEC
-
TO-243
-
PNP complement
BCP53
BCX53
BC53PA
1.2 Features and benefits
ï® High current
ï® Three current gain selections
ï® High power dissipation capability
ï® Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
ï® Leadless very small SMD plastic package with medium power capability (SOT1061)
ï® AEC-Q101 qualified
1.3 Applications
ï® Linear voltage regulators
ï® Low-side switches
ï® Battery-driven devices
ï® Power management
ï® MOSFET drivers
ï® Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
hFE
collector-emitter voltage open base
-
-
collector current
-
-
peak collector current single pulse; tp ï£ 1 ms
-
-
DC current gain
VCE = 2 V; IC = 150 mA [1] 63
-
hFE selection -10
VCE = 2 V; IC = 150 mA [1] 63
-
hFE selection -16
VCE = 2 V; IC = 150 mA [1] 100 -
80 V
1
A
2
A
250
160
250
[1] Pulse test: tp ï£ 300 ïs; ï¤ = 0.02.
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