BAV99W Datasheet, PDF (1/14 Pages) NXP Semiconductors – High-speed double diode

BAV99 series
High-speed switching diodes
Rev. 8 — 18 November 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV99
SOT23
-
BAV99S
SOT363 SC-88
BAV99W
SOT323 SC-70
JEDEC
TO-236AB
-
-
Configuration
dual series
quadruple; 2 series
dual series
Package
configuration
small
very small
very small
1.2 Features and benefits
„ High switching speed: t_rr ≤ 4 ns
„ Low leakage current
„ Small SMD plastic packages
„ Low capacitance: C_d ≤ 1.5 pF
„ Reverse voltage: V_R ≤ 100 V
„ AEC-Q101 qualified
1.3 Applications
„ High-speed switching
„ General-purpose switching
„ Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
I_R
reverse current
V_R
reverse voltage
t_rr
reverse recovery time
Conditions
V_R = 80 V
Min Typ
-
-
-
-
[1] _-
-
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
0.5
100
4
Unit
μA
V
ns