BAV70 Datasheet, PDF (1/15 Pages) NXP Semiconductors – High-speed double diode

BAV70 series
High-speed switching diodes
Rev. 07 — 27 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV70
SOT23 -
BAV70M
SOT883 SC-101
BAV70S
SOT363 SC-88
BAV70T
BAV70W
SOT416
SOT323
SC-75
SC-70
JEDEC
Package
configuration
TO-236AB small
-
leadless ultra
small
-
very small
-
ultra small
-
very small
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
1.2 Features
I High switching speed: t_rr ≤ 4 ns
I Low leakage current
I Small SMD plastic packages
I Low capacitance: C_d ≤ 1.5 pF
I Reverse voltage: V_R ≤ 100 V
1.3 Applications
I High-speed switching
I General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
I_R
reverse current
V_R
reverse voltage
t_rr
reverse recovery time
Conditions
V_R = 80 V
Min Typ
-
-
-
-
[1] _-
-
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
0.5
100
4
Unit
µA
V
ns