BAV23 Datasheet, PDF (1/13 Pages) NXP Semiconductors – General purpose double diode

BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BAV23A
SOT23
BAV23C
SOT23
BAV23S
SOT23
BAV23
SOT143B
JEDEC
TO-236AB
TO-236AB
TO-236AB
-
Configuration
dual common anode
dual common cathode
dual series
dual isolated
1.2 Features and benefits
 High switching speed: t_rr  50 ns
 Low leakage current
 Repetitive peak reverse voltage:
V_RRM  250 V
 Low capacitance: C_d  2 pF
 Small SMD plastic package
1.3 Applications
 High-speed switching at high voltage
 High-voltage general-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
I_R
reverse current
V_R
reverse voltage
t_rr
reverse recovery time
Conditions
V_R = 200 V
Min Typ
-
-
-
-
[1] _-
-
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 ; measured at I_R = 1 mA.
Max
100
200
50
Unit
nA
V
ns