BAS28 Datasheet, PDF (1/12 Pages) NXP Semiconductors – High-speed double diode

BAS28
High-speed double diode
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
„ High switching speed: t_rr ≤ 4 ns
„ Reverse voltage: V_R ≤ 75 V
„ Repetitive peak reverse voltage: V_RRM ≤ 85 V
„ Repetitive peak forward current: I_FRM ≤ 500 mA
„ AEC-Q101 qualified
„ Small SMD package
1.3 Applications
„ High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
I_F
forward current
I_R
reverse current
V_R
reverse voltage
t_rr
reverse recovery time
Conditions
V_R = 75 V
Min Typ
[1] _-
-
-
-
-
-
[2] _-
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
[2] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
215
1
75
4
Unit
mA
μA
V
ns