BAS16VV Datasheet, PDF(1/12 Page) NXP Semiconductors – Triple high-speed switching diodes

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BAS16VV Datasheet, PDF (1/12 Pages) NXP Semiconductors – Triple high-speed switching diodes

BAS16VV; BAS16VY

Triple high-speed switching diodes

Rev. 03 â 20 April 2007

Product data sheet

1. Product proï¬le

1.1 General description

Triple high-speed switching diodes, encapsulated in very small Surface-Mounted Device

(SMD) plastic packages.

Table 1. Product overview

Type number

Package

NXP

BAS16VV

SOT666

BAS16VY

SOT363

JEITA

SC-88

Conï¬guration

triple isolated

1.2 Features

I High switching speed: trr â¤ 4 ns

I Low leakage current

I Reverse voltage: VR â¤ 100 V

I Very small SMD plastic packages

1.3 Applications

I High-speed switching

I General-purpose switching

I Voltage clamping

I Reverse polarity protection

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Per diode

forward current

reverse voltage

trr

reverse recovery time

Conditions

Min Typ

[1] -

[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 â¦; measured at IR = 1 mA.

Max

200

100

Unit

▷