BAS16J Datasheet, PDF (1/10 Pages) NXP Semiconductors – Single high-speed switching diode

BAS16J
Single high-speed switching diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I High switching speed: t_rr ≤ 4 ns
I Low leakage current
I Repetitive peak reverse voltage:
V_RRM ≤ 100 V
I Excellent coplanarity and improved
thermal behavior
I Low capacitance: C_d ≤ 1.5 pF
I Reverse voltage: V_R ≤ 100 V
I Very small and flat lead SMD plastic
package
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I_F
I_R
V_R
t_rr
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Conditions
V_R = 75 V
Min Typ
[1] _-
-
-
-
-
-
[2] _-
-
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
[2] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
250
1
100
4
Unit
mA
µA
V
ns