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74LVC2G00DC-G Datasheet, PDF (1/20 Pages) NXP Semiconductors – Dual 2-input NAND gate
74LVC2G00
Dual 2-input NAND gate
Rev. 12 — 8 April 2013
Product data sheet
1. General description
The 74LVC2G00 provides a 2-input NAND gate function.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
 Wide supply voltage range from 1.65 V to 5.5 V
 5 V tolerant outputs for interfacing with 5 V logic
 High noise immunity
 24 mA output drive (VCC = 3.0 V)
 CMOS low power consumption
 Complies with JEDEC standard:
 JESD8-7 (1.65 V to 1.95 V)
 JESD8-5 (2.3 V to 2.7 V)
 JESD8-B/JESD36 (2.7 V to 3.6 V)
 Latch-up performance exceeds 250 mA
 Direct interface with TTL levels
 Inputs accept voltages up to 5 V
 ESD protection:
 HBM JESD22-A114F exceeds 2000 V
 MM JESD22-A115-A exceeds 200 V
 Multiple package options
 Specified from 40 C to +85 C and 40 C to +125 C