74AUP2G17 Datasheet, PDF (1/18 Pages) NXP Semiconductors – Low-power dual Schmitt trigger

74AUP2G17
Low-power dual Schmitt trigger
Rev. 02 — 10 January 2008
Product data sheet
1. General description
The 74AUP2G17 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
This device ensures a very low static and dynamic power consumption across the entire
V_CC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I_OFF.
The I_OFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP2G17 provides two Schmitt trigger buffers. It is capable of transforming slowly
changing input signals into sharply defined, jitter-free output signals.
The inputs switch at different points for positive and negative-going signals. The difference
between the positive voltage V_T+ and the negative voltage V_T− is defined as the input
hysteresis voltage V_H.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114E Class 3A exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; I_CC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of V_CC
s I_OFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C