74AUP1G80 Datasheet, PDF (1/18 Pages) NXP Semiconductors – Low-power D-type flip-flop; positive-edge trigger

74AUP1G80
Low-power D-type flip-flop; positive-edge trigger
Rev. 01 — 20 October 2006
Product data sheet
1. General description
The 74AUP1G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V_CC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V_CC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I_OFF.
The I_OFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G80 provides the single positive-edge triggered D-type flip-flop. Information
on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock
pulse. The input pin D must be stable one set-up time prior to the LOW-to-HIGH clock
transition for predictable operation.
2. Features
I Wide supply voltage range from 0.8 V to 3.6 V
I High noise immunity
I Complies with JEDEC standards:
N JESD8-12 (0.8 V to 1.3 V)
N JESD8-11 (0.9 V to 1.65 V)
N JESD8-7 (1.2 V to 1.95 V)
N JESD8-5 (1.8 V to 2.7 V)
N JESD8-B (2.7 V to 3.6 V)
I ESD protection:
N HBM JESD22-A114-D exceeds 5000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101-C exceeds 1000 V
I Low static power consumption; I_CC = 0.9 µA (maximum)
I Latch-up performance exceeds 100 mA per JESD 78 Class II
I Inputs accept voltages up to 3.6 V
I Low noise overshoot and undershoot < 10 % of V_CC
I I_OFF circuitry provides partial Power-down mode operation
I Multiple package options
I Specified from −40 °C to +85 °C and −40 °C to +125 °C