2N7002PV Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 350 mA N-channel Trench MOSFET

2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per transistor
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
R_DSon
drain-source on-state
resistance
Conditions
T_amb = 25 °C
T_amb = 25 °C
T_amb = 25 °C;
V_GS = 10 V
T_j = 25 °C;
V_GS = 10 V;
I_D = 500 mA
Min Typ Max Unit
-
-
60
V
-
-
±20 V
[1] _-
-
350 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm².