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2N7002PS Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 320 mA N-channel Trench MOSFET | |||
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2N7002PS
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 â 1 July 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per transistor
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
Min Typ Max Unit
-
-
60
V
-
-
±20 V
[1] -
-
320 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
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