2N7002P Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 0.3 A N-channel Trench MOSFET

2N7002P
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 19 April 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V_DS
V_GS
I_D
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
R_DSon
drain-source on-state
resistance
Conditions
25 °C ≤ T_j ≤ 150 °C
T_amb = 25 °C;
V_GS = 10 V
T_j = 25 °C;
V_GS = 10 V;
I_D = 500 mA
Min Typ Max Unit
-
-
60
V
-
-
±20 V
-
-
300 mA
-
1
1.6 Ω