2N7002KA Datasheet, PDF (1/11 Pages) NXP Semiconductors – N-channel TrenchMOS FET

2N7002KA
N-channel TrenchMOS FET
Rev. 03 — 25 February 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Logic level compatible
I Very fast switching
I Subminiature surface-mounted package I Gate-source ElectroStatic Discharge
(ESD) protection diodes
1.3 Applications
I Relay driver
I High-speed line driver
1.4 Quick reference data
I V_DS ≤ 60 V
I R_DSon ≤ 4.4 Ω
I I_D ≤ 320 mA
I P_tot ≤ 0.83 W
2. Pinning information
Table 1. Pinning
Pin
Description
1
gate (G)
2
source (S)
3
drain (D)
Simplified outline
3
Symbol
D
1
2
G
SOT23 (TO-236AB)
S
003aac036