2N7002F215 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

2N7002F
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
s Logic level threshold compatible
s Surface-mounted package
s Very fast switching
s TrenchMOS technology
1.3 Applications
s Logic level translator
s High-speed line driver
1.4 Quick reference data
s V_DS ≤ 60 V
s R_DSon ≤ 2 Ω
s I_D ≤ 475 mA
s P_tot ≤ 0.83 W
2. Pinning information
Table 1: Pinning
Pin
Description
1
gate (G)
2
source (S)
3
drain (D)
Simplified outline
3
1
2
SOT23
Symbol
D
G
mbb076 S