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2N7002CK Datasheet, PDF (1/13 Pages) NXP Semiconductors – 60 V, 0.3 A N-channel Trench MOSFET
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009
Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
I Logic-level compatible
I Very fast switching
I Trench MOSFET technology
I ESD protection up to 3 kV
1.3 Applications
I Relay driver
I High-speed line driver
I Low-side loadswitch
I Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
IDM
Quick reference data
Parameter
drain-source voltage
drain current
peak drain current
RDSon
drain-source on-state
resistance
Conditions
single pulse;
tp ≤ 10 µs
VGS = 10 V;
ID = 500 mA
Min Typ Max Unit
-
-
60
V
-
-
300 mA
-
-
1.2 A
-
1.1 1.6 Ω