2N7002BKT Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 290 mA N-channel Trench MOSFET

2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
Rev. 1 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ ESD protection up to 2 kV
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
V_GS
I_D
R_DSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
T_amb = 25 °C
T_amb = 25 °C
T_amb = 25 °C;
V_GS = 10 V
T_j = 25 °C;
V_GS = 10 V;
I_D = 500 mA
-
-
60
V
-
-
±20 V
[1] _-
-
290 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².